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Case Study: Implementing GaN DC-DC Converters in Power Supplies



The transition from silicon-based MOSFETs to gallium nitride (GaN) semiconductors is reshaping power electronics. With 30% faster switching speeds and 60% lower energy losses (IDTechEx, 2023), GaN DC-DC converters are becoming critical for applications like electric vehicles, renewable energy, and data centers. This case study examines Leyu Tech’s implementation of GaN in industrial power supplies, highlighting technical challenges, solutions, and verified outcomes.




Case Study Overview: Leyu’s GaN-Powered Industrial UPS

Client Profile

  • Industry: Data Center Infrastructure

  • Challenge: Achieve 95%+ efficiency in a 10 kW uninterruptible power supply (UPS) under 50°C ambient temperatures.

Solution
Leyu deployed a GaN-based DC-DC converter with:

  • 650 V GaN HEMTs (high-electron-mobility transistors) for reduced switching losses.

  • 3D PCB Layout to minimize parasitic inductance.

  • Active Clamp Flyback Topology for zero-voltage switching (ZVS).

Results

  • Efficiency: 96.2% at full load (vs. 92% with silicon).

  • Footprint: Reduced by 40%.

  • Thermal Performance: Junction temperatures stabilized at 85°C under stress testing.




Technical Advantages of GaN in DC-DC Converters

GaN vs. Silicon: Key Comparisons


Parameter GaN HEMT Silicon MOSFET

Switching Frequency

1–10 MHz

100–500 kHz

RDS(on) (per 100 V)

15 mΩ

35 mΩ

Thermal Conductivity

130 W/m·K

150 W/m·K

Cost (per unit)

$4.20

$1.80

Source: IEEE Transactions on Power Electronics, 2022

Why GaN Wins

  • Higher Switching Frequencies: Enables smaller magnetics and capacitors.

  • Lower Conduction Losses: Ideal for high-current applications.

  • Enhanced Thermal Resilience: Reduces cooling system complexity.




Leyu’s Implementation: Challenges & Innovations

Challenge 1: EMI Mitigation

GaN’s fast edges caused EMI spikes exceeding FCC Class B limits.
Solution:

  • Slew Rate Control: Adjusted gate drivers to 50 V/ns.

  • Common-Mode Chokes: Integrated into input filters.

  • Result: Passed CISPR 32 standards with 6 dB margin.

Challenge 2: Cost Optimization

Despite performance gains, GaN’s upfront cost was 2.3× higher than silicon.
Solution:

  • Lifetime ROI Analysis: Demonstrated 18-month payback via energy savings.

  • Scalable Design: Modular architecture allowed reuse across 5–20 kW systems.




Data Verification & Third-Party Validation

Leyu collaborated with TÜV Rheinland for independent testing:

  • Efficiency: 96.2% verified at 230 VAC input, 48 VDC output.

  • Reliability: 1,000-hour continuous load test showed <2% efficiency degradation.

  • Safety: UL 1741 and IEC 62109-1 certifications achieved.

Download full test reports here.




Expert Opinions & Industry Trends

Dr. Emily Zhang, Power Systems Professor, MIT:
“GaN’s ability to operate at MHz frequencies with minimal losses makes it indispensable for next-gen power grids. However, designers must prioritize gate driver compatibility to avoid oscillations.”

Market Outlook:
The GaN power devices market is projected to grow at 29% CAGR (2023–2030), driven by EV adoption and 5G infrastructure (Yole Développement).




Customized Solutions by Leyu Tech

Leyu offers tailored GaN DC-DC converter designs for:

  • EV Chargers: 20–150 kW bidirectional systems.

  • Solar Inverters: 98.5% peak efficiency with MPPT integration.

  • Custom Requests: Contact Leyu’s team for application-specific prototyping.




Conclusion

GaN DC-DC converters deliver transformative efficiency but require careful thermal and EMI management. Leyu’s case study proves that with innovative design and rigorous validation, GaN outperforms silicon in high-demand environments. As industries prioritize energy savings, GaN adoption will accelerate—partnering with experts like Leyu ensures seamless integration.

Disclaimer: Results vary based on operational conditions. Consult Leyu’s technical team for project-specific assessments. Data sourced from third-party labs; refer to official product sheets for details.


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